Semiconductor optical device

摘要

A semiconductor optical device including: a substrate including a first region and a second region; a first optical waveguide disposed on the first region, the first optical waveguide including a core layer and a cladding layer disposed on the core layer, the cladding layer including a first cladding region and a semiconductor layer disposed on the first cladding region, the first optical waveguide extending from an end facet of the semiconductor optical device to a boundary between the first region and the second region; a second optical waveguide disposed on the second region; and a region disposed on the cladding layer, the region having a lower refractive index than that of the first cladding region. The semiconductor layer has a higher refractive index than that of the first cladding region. The thickness of the core layer monotonically increases from the end facet toward the boundary.

主权项

1. A semiconductor optical device comprising:
a substrate including a first region and a second region arranged in a first direction; a first optical waveguide disposed on the first region, the first optical waveguide including a core layer and a cladding layer disposed on the core layer, the cladding layer including a first cladding region, a semiconductor layer disposed on the first cladding region, and a second cladding region on the semiconductor layer, the first optical waveguide extending in the first direction from an end facet of the semiconductor optical device to a boundary between the first region and the second region; a second optical waveguide disposed on the second region, the second optical waveguide being optically connected to the first optical waveguide at the boundary; and a region disposed on the cladding layer, the region having a lower refractive index than that of the first cladding region, wherein the semiconductor layer has a higher refractive index than that of the first cladding region, the core layer has a first thickness at a vicinity of the end facet of the semiconductor optical device and a second thickness at the boundary between the first region and the second region, the thickness of the core layer monotonically increases from the first thickness to the second thickness in the first region along the first direction, the second cladding region has thickness smaller than that of the first cladding region, the second cladding region has a refractive index lower than that of the semiconductor layer, and the second cladding region is in contact with the region disposed on the cladding layer.