| 摘要 |
<p>PURPOSE:To from a high-density and highly integrated pixel by extending the pixel electrode to the upper part of a signal conductor, and increasing an opening rate. CONSTITUTION:An interlayer insulating film 6 is wet-etched by hydrofluoric acid to form a contact window between the source and drain regions of a transistor, Al is laminated, and a signal conductor 5 is formed on the source region and a drain electrode 8 on the drain region. An NSG film is laminated as the second interlayer insulating film to cover the signal conductor 5 and the drain electrode 8, and a contact window is formed only on the drain electrode 8 by reverse sputtering. Al is laminated on the second interlayer insulating film to form a pixel electrode 7. Under such a constitution, the pixel electrode 7 is also formed on the source electrode 5 (signal conductor) with the second interlayer insulating film. Consequently, the ratio of the area occupied by the pixel electrode in the pixel is increased, the opening rate is improved, and a high-density and highly integrated pixel is obtained.</p> |
