发明名称 |
PRODUCTION OF X-RAY WINDOW MATERIAL |
摘要 |
PURPOSE:To obtain an X-ray window excellent in the transmission characteristic of low energy X-ray by applying etching to silicon on the rear side of a diamond film formed on a silicon substrate in which boron ions are implanted into reticular state and forming a backup grid. CONSTITUTION:Boron ions are implanted in a single-crystal silicon substrate 1 into reticular state. A thin diamond film 3 is formed on the ion-implanted surface of this silicon substrate 1. Subsequently, etching is applied to the silicon substrate 1 from the side uncoated with the above diamond film 3, and a part 2 in which boron ions are implanted is allowed to remain and formed into a backup grid 5. |
申请公布号 |
JPH03170672(A) |
申请公布日期 |
1991.07.24 |
申请号 |
JP19890308173 |
申请日期 |
1989.11.28 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
YASHIKI TETSUO;FUJIMORI NAOHARU;NAKAHATA HIDEAKI |
分类号 |
G01N23/00;C23C14/06;C23C16/02;C23C16/26;C23C16/27;C23F4/00 |
主分类号 |
G01N23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|