| 摘要 |
PURPOSE:To make it possible to form a minute pattern on a high step by silylating novolak-based resist at an upper layer with gas plasma containing Si, and forming a pattern of thermosoftening resin at a lower layer with the resist as a mask. CONSTITUTION:A thermosoftening resin 2 which is hard to form silica is formed on a substrate having a step. The surface is heated and flattened. Thereafter, novolak-based resist 3 which can readily be silylated is formed on the surface. Then exposure and development are performed and patterning is performed. Thereafter, the novolak-based resist 3 at the upper layer is silylated with Si radical 11 by plasma surface treatment using gas plasma containing Si such as SiF4 and SiCl4. Thereafter, with the novolak-based resist pattern 3 in the silylated form as a mask, patterning of the thermosoftening resin at the lower layer is performed by a reactive ion etching method 12 using O2 gas. Thus, the minute pattern is formed on the high step highly accurately. |
