| 摘要 |
<p>1,237,099. Semi-conductor device. FAIRCHILD CAMERA & INSTRUMENT CORP. 4 Sept., 1968 [13 Nov., 1967], No. 42135/68. Heading H1K. An electrical connection is made to a semiconductor device by forming at least one conductive contact area on the surface of the device and depositing a first layer of conductive selectively adhering material over the area and a portion of the surface which material adheres to the area but not the surface. A monolithic Si chip 10 having a scribe line 14 for separating the chip into a plurality of devices, has an oxide of silicon layer 13 formed thereon. Aluminium contact pads 12 are provided on the chip and the chip covered with a mask having elongate holes which are coincident with the pads but extend beyond them. Thin layers 16 of silver are evaporated through the mask. A thicker layer 18 of aluminium is then evaporated through the mask. The chip is scribed on its back and separated into a plurality of devices (Fig. 3) each having a beam lead 20. The thin layer of silver 16 is provided on the oxide layer because it does not adhere to the oxide and therefore the devices are more easily separated from one another. The plurality of devices with their beam leads are formed alternately on either side of the scribe line 14 (Fig. 2, not shown). In an alternative embodiment the aluminium layer 18 is omitted. The aluminium layer may be replaced by Cr, Pt, Ti, Mo or Au whilst the silver layer may be replaced by Sb or Au.</p> |
