| 摘要 |
<p>PURPOSE:To secure the flatness of film surface, and to contrive improvement both in the quality of an X-ray mask, for which microscopic working is required, and productivity. CONSTITUTION:X-ray transmitting film 12a and 12b are formed on both sides of a silicon substrate 11. The material of these films is silicon ceramic, a low pressure CVD method is selected as the method of formation of the above- mentioned films. The center part of the X-ray transmitting film 12a is etched using a reactive ion-etching method, and a ring-shaped film 12c is formed by removing the circumferential part of the X-ray transmitting film 12a. Then, a flattening treatment is conducted on the surface of the X-ray transmitting film 12b using an etching-back method. After the X-ray transmitting film 12b is coated with a treatment film 14 using a spin-coating method, the surface of the treatment film 14 is etched using a reactive ion-etching method. When the treatment film 14 is removed completely by etching, a flatly treated X-ray transmitting film 12d is formed, and an X-ray absorbing film 15 is formed thereon. Reactive ion-beam etching is conducted on the X-ray absorbing film 15, and a pattern 15a is formed.</p> |
