| 摘要 |
<p>PURPOSE:To measure reflectivity accurately by measuring the intensity of the emitted light from a light source and the intensity of the reflected light, and obtaining the reflectivity based on the ratio between both intensities. CONSTITUTION:Power is applied to a semiconductor laser 1, and light is emitted. A half mirror 3 is adjusted, and the light is applied on the part to be measured of a sample 4. The intensity of the emitted light from the laser 1 is measured with a monitoring photodetector 7 and an ammeter 9. The intensity of the reflected light from the sample 4 is measured with a measuring photodetector 2 and an ammeter 8. The reflectivity is obtained based on the ratio between the current values of the ammeters 8 and 9. The measurement is being performed, and the sample 4 is moved with a microstage 5. Thus the distribution of the reflectivities is obtained. Even if the intensity of the light projected on the sample 4 is changed, there is no adverse effect. When this method is applied on measurement requiring a relatively long time from the start of measurement to the end, the method is effective.</p> |
