发明名称 |
SOURCE OF ION |
摘要 |
PURPOSE:To generate ion of every kind with high efficiency and high yield, by forming a thin film by sputtering a target with the ion utilized plasma or by forming the ion for etching by utilizing sputtering by high density plasma. CONSTITUTION:2.45GHz micro wave is introduced into a plasma forming chamber 1 through a window 6. The plasma forming chamber 1 has a specified diameter and a specified length to form a cavity resonator of microwave. Two target 5, 5 facing each other and impressed with minus high voltage are arranged in the chamber and an electro magnet 8 for generating mirror field is fitted to the chamber at the side of the target. A grid 4 for taking out the ion is set at the opposite side of the waveguide 7 of the plasma forming chamber 1. Plasma 10 is formed by introducing gaseous Ar into the plasma forming chamber 1 and the generated gaseous Ar ion is subjected to collide against the cathode of the target 5. Then the ion generated with the target 5 of every kind is taken out as the uniform ion beam 9 through the grid 4 and is utilized for forming thin film or etching. |
申请公布号 |
JPS6396283(A) |
申请公布日期 |
1988.04.27 |
申请号 |
JP19860241741 |
申请日期 |
1986.10.11 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
MATSUOKA SHIGETO;ONO KENICHI |
分类号 |
H01L21/302;C23C14/22;C23C14/34;C23C16/48;C23C16/50;C23C16/511;C23F4/00;H01J27/16;H01J37/08;H01L21/3065 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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