发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To surely form fine patterns which have a good shape and are free from film peeling by using a resin copolymerizing with components having a functional group which is soluble in alkalis in an acid atmosphere. CONSTITUTION:A pattern forming material film 2 contg. a resin having the functional group which is soluble in the alkalis in the acid atmosphere and a hydrophilic component, a photosensitive compd. which generates an acid by exposing, and a solvent which can dissolve the resin and compd. is formed on a substrate 1. The film material 2 is subjected to selective exposing with far UV rays, heat treatment and developing to form the patterns. The functional group of the resin receives a chemical change by an acid an becomes soluble in the alkalis when subjected to a heat treatment in succession to the exposing stage in this case. This functional group elutes into the developing soln. at the time of development. On the other hand, the acid is not generated in the unexposed parts and, therefore, the chemical change does not arise in spite of the heat treatment and there is no development of the alkaline soluble group. The patterns 2a, 2c of the positive type having a good contrast free from the film peeling are formed in this way.
申请公布号 JPH03223857(A) 申请公布日期 1991.10.02
申请号 JP19900019529 申请日期 1990.01.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TANI YOSHIYUKI;SASAKO MASARU
分类号 G03F7/039;G03F7/09;G03F7/26;H01L21/027;H01L21/30 主分类号 G03F7/039
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