| 摘要 |
<p>PURPOSE: To improve gate electrodes in inter-electrode insulation peoperties and to enhance a semiconductor substrate and the gate electrodes in dielectric properties between them by a method wherein an insulating film which isolates the gate electrodes from each other is composed of a second oxide film and a second nitride film. CONSTITUTION: A first oxide film 22 and a first nitride film 23 are successively formed on a semiconductor 21. Then, conductive matter is formed on all the surface, and a first gate electrode 24 is formed through a usual photoengraving technique. Then, a second oxide film 25 is formed on the upper surface and side wall of the first gate electrode 24, and only the nitride film 23 exposed on the surface of the first gate electrode 24 is removed. Then, a second nitride film 26 is evaporated on all the surface. The second nitride film 26 is formed as thick as the first nitride film 23. After conductive matter is evaporated on the second nitride film 26, a second gate electrode 27 is provided. By this setup, a fragile part is prevented from being produced at the edge of the first gate electrode 24, and the first nitride film 23 contaminated in an etching process can be replaced.</p> |
