发明名称 |
Select transistor architecture for a virtual ground non-volatile memory cell array |
摘要 |
A bit line selector for a virtual ground non-volatile read only memory ("NROM") cell array is disclosed. The selector transistors are oriented such that the channel length is perpendicular to the bit line and the channel width is parallel to the bit line. Subsequent reduction in the bit line pitch does not affect the channel width of the select transistors or their drive current. |
申请公布号 |
AU8314701(A) |
申请公布日期 |
2002.04.22 |
申请号 |
AU20010083147 |
申请日期 |
2001.08.06 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
RICHARD M. FASTOW;MARK W. RANDOLPH;SHANE C. HOLLMER |
分类号 |
G11C16/04;G11C16/14;H01L21/8246;H01L27/115 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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