| 摘要 |
A CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to decrease the number of signal reading circuits or A/D converts, thereby reducing the entire size of chip. An image sensor comprises a pixel array consisting of one or more unit pixels for converting optical signals into electric signals. A timing control circuit(360) generates a control signal for controlling timing. A column decoder(320) selects a column of the pixel array according to the control signal. A row decoder(330) selects a row of the pixel array according to the control signal. A signal reading circuit(340) reads electric signals of respective unit pixels included in the selected column sequentially. A converter(350) converts the read electric signals into analog/digital signals and outputs the converted signals. The row decoder(330) selects unit pixels included in the column selected by the column decoder(320).
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