Integrated circuits with an insultating layer and methods for producing such integrated circuits

摘要

Integrated circuits and methods for producing the same are provided. A method of producing the integrated circuits includes forming an insulating layer overlying a substrate. The insulating layer includes a first composition that includes silicon oxide and a porogen. The porogen is removed from the first composition to form a second composition that includes a pore, where the second composition has a dielectric constant lower than that of the first composition. An insulating layer mechanical property desired range is determined, where the second composition has an insulating material mechanical property outside of the insulating layer mechanical property desired range. The second composition is altered to form a third composition, where the third composition has the insulating layer mechanical property within the insulating layer mechanical property desired range.

主权项

1. A method of producing an integrated circuit comprising:
forming an insulating layer overlying a substrate, wherein the insulating layer comprises a first composition, wherein the first composition comprises silicon oxide and a porogen; forming a via in the insulating layer; removing the porogen from the first composition to form a second composition comprising a pore, wherein the second composition has a dielectric constant lower than that of the first composition; determining an insulating layer mechanical property desired range, wherein the second composition has a mechanical property outside of the insulating layer mechanical property desired range; altering the second composition to form a third composition, wherein the third composition has the mechanical property within the insulating layer mechanical property desired range; and forming a contact within the via, wherein the contact is formed before altering the second composition to form the third composition.