| 摘要 |
1,238,403. Semi-conductor devices. ITT INDUSTRIES Inc. 30 April, 1969 [1 May, 1968], No. 21961/69. Heading H1K. [Also in Division H1] To avoid regions of high electric stress at the shoulder of a planar PN junction and at the edges of a contact to the surface zone forming the junction, the junction is made shallow and the outer edge of the electrode is formed over thicker passivation than that part of the electrode nearer the contact area. The embodiment described is a high breakdown voltage diode but the invention is applicable also to transistors and other devices. |
