| 摘要 |
<PICT:1092071/C6-C7/1> In the manufacture of cryotrons involving the formation of successive films of conductive and insulating material selected areas of the conductive films are removed to form parts of the cryotron, and holes are formed in the insulating films through which electrical contact between adjacent films is established. The flip-flop shown schematically in Fig. 1 may be formed on a substrate of glass or plastic by subjecting it to a glow discharge in oxygen or argon and then vapour depositing lead to form a ground plate. This is reduced to the required form by standard positive photo-resist masking and etching techniques. After removing the photo-resist a negative photo-resist material is applied and apertures formed in it by similar techniques. A tin layer is then deposited over this layer to contact the ground plane through the holes. The layer is then reduced by photo-resist masking and etching techniques to leave the gates 34, 36, 46, 48 and the tin in the aperture. After removing the photo-resist a further layer of photo-resist is applied and apertured and a second layer of lead vapour deposited and reduced by etching using photo-resist masking. Finally the assembly is covered with a layer of insulating photo-resist. The number of processing steps may be reduced by using the same photo-resist layer for the formation of masks for each metal shaping and subsequent aperture forming process. If required the order in which the layers are deposited may be reversed and the metals deposited by sputtering. |
