| 摘要 |
1,174,269. Pressure variable resistors. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 9 Dec., 1966 [10 Dec., 1965], No. 55307/66. Heading H1K. Pressure variations are transformed into variations of the electrical properties of a semiconductor body by applying pressure to a semiconductor body containing Cu, Fe, Co or Mn to form deep level impurities and sensing the resultant change in electrical resistance of the body. In one embodiment a germanium film 21 containing Cu or Fe is deposited on a plastic film substrate and gold and rhodium electrodes respectively 23, 24 are provided. Pressure on the film, transmitted by a solid, liquid or gas medium, varies the resistance between the electrodes. Another embodiment utilised an N-type region 32 in a deep level (Cu) doped silicon single crystal 31 with a gold-antimony electrode 33 and an aluminium electrode 34. The semi-conductor may also consist of GaAs, CdS, InSb or CdTe. |
