Etching mask for semiconductor device - manufacture

摘要

A layer of insulation is formed on the surface of the semiconductor substrate, e.G. Si by oxidation to a thickness of 5000-10000 angstrom film of Ta (or Ti, W, Zr, Nb or Hf) is sputtered over this film of silicon dioxide to a thickness 100 - 500 angstrom. Over this a conventional mash is applied photographically and openings are etched in the metal film after which the resist is removed and the metal film oxidized to form the etching mask for the silicon dioxide.