发明名称 PURIFYING METHOD OF WAFER SUPPORTING TOOL
摘要 PURPOSE:To prevent the deformation of a wafer supporting tool and to contrive the simplification of a process and the reduction of time by a method wherein the exfoliation of a film by low-temperature cooling is utilized. CONSTITUTION:A wafer supporting tool 1 adhered a growth film 2 is firstly cooled to room temperature. Next, the wafer supporting tool 1 arrived at the room temperature is further cooled in liquid nitrogen or at the temperature corresponding to the liquid nitrogen, then the exfoliation of a growth film 2a is followed. Then, the exfoliated growth film 2a is mechanically and completely eliminated by a blush or the blast of nitrogen gas. After that, the temperature of the wafer supporting tool 1 is gradually returned to room temperature from a low temperature.
申请公布号 JPS5834913(A) 申请公布日期 1983.03.01
申请号 JP19810135237 申请日期 1981.08.27
申请人 MITSUBISHI DENKI KK 发明人 MIYAKE KUNIAKI;YAKUSHIJI HISAO
分类号 B08B3/10;B08B7/00;C23C16/44;C30B25/12;H01L21/205;H01L21/31 主分类号 B08B3/10
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