| 摘要 |
PURPOSE:To enable an emission wavelength peak to be controlled through voltage by a method wherein an insulator thin film is formed on the upside of a P-type or an N-type semiconductor, a metal film is provided onto the insulator thin film, and an electrode is built on the underside of the P or the N-type semiconductor. CONSTITUTION:An N-side electrode 4 is formed on the peripheral part of the underside of an N-type GaAs semiconductor 3, an Al2O3 insulating thin film 5 is formed on the upside of the semiconductor 3, and an Al metal film 6 serving also as an electrode is formed thereon as thick as 2mum. In the manufacture of a light emitting element of this design, an ohmic electrode of Au.Ge/Ni/Au is formed on the rear side of an N-type GaAs substrate. Then, the substrate is cleaned in a vacuum, Al is deposited as thick as 10Angstrom and exposed to oxygen to be oxidized to form an insulator, and Al is deposited thereon as thick as 2mum. When a negative voltage is applied to the N-side electrode of this element and a positive voltage is applied to the Al metal film 6, electrons are made to penetrate through an insulator of Al2O3 owing to a tunnel effect to emit light. When a voltage applied to this element is made to increase, a wavelength peak is made to shift to a shorter wavelength side, and when a voltage is decreased, a wavelength peak is shifted to a lower energy side. |
