| 摘要 |
PURPOSE:To insulate a base or a gate electrode and source and drain electrodes, and to contrive to shorten the distances between the respective electrodes by a method wherein a metal for electrode on insulating films on both the sides of the base or the gate electrode part is removed selectively using oblique ion beam milling. CONSTITUTION:The incident angle (alpha) of an ion beam is the angle formed between the surface of a film and the ion beam, and when the angle (alpha) to a vertical wall satisfies the condition alpha deg.>45 deg. at the case of Au, the metal deposited on the vertical wall is etched at a more larger etching rate, and as a result, the metal on the SiO2 film of the side wall is etched selectively. Therefore the AuGe/Ni/Ti/Au metal 15 for an emitter and a collector electrode is evaporated to the whole surface, and after then, by removing selectively the metal 15 for the emitter and the collector electrodes evaporated on the SiO2 film of the side wall according to oblique ion beam milling, electrode separation between the base electrode is attained, and the emitter and the collector electrodes are formed. Accordingly, the distance between the emitter and the base electrodes and the distance between the base and the collector electrodes can be shortened sharply as compared with a laterally bipolar transistor.
|
