| 摘要 |
A device and method for determining alignment accuracy between magnetoresistive elements and contacts of magnetoresistive heads formed on a wafer are disclosed. A first alignment test structure is defined using a first photomask. The first alignment test structure is formed from a first material having a first characteristic sheet resistivity. A second alignment test structure is defined using a second photomask. The second alignment test structure is formed from a second material having a second characteristic sheet resistivity lower than the first characteristic sheet resistivity. The second alignment test structure is formed in contact with the first alignment test structure. A resistance value is dependent upon the first and second characteristic sheet resistivities and upon alignment between the first alignment test structure and the second alignment test structure such that changes in alignment between the first and second alignment test structures result in changes in the resistance value. Changes in the resistance value are indicative of changes in alignment between magnetoresistive elements and contacts formed on the wafer.
|
