| 摘要 |
PROBLEM TO BE SOLVED: To provide means for improving the long-term reliability of a member to be a thermal conduction passage in a power semiconductor module and the cooling performance of the semiconductor module. SOLUTION: A material 20 having a m.p. lower than the max. working temp. of an IGBT element 4 is provided between an insulation substrate 3 to be a thermal conduction passage in an IGBT module (power semiconductor module) 1 and heat radiating metal base plate 2, and a double-layer coating layer is provided by coating an anticorrosive member 21a on the surfaces of the radiating metal base plate 2 and the insulation substrate 3 maping contact with the low m.-p. material 20 and coating a high contact member 22 having a good contact to the low-m.p. material 20 thereon. As a result, a thermal stress-free capability is realized between the members, the long-time reliability is enhanced greatly, the cooling performance of the IGBT module 1 is enhanced, and moreover alloying of the low-m.p. material 20 is suppressed. |
