| 摘要 |
PROBLEM TO BE SOLVED: To satisfactorily form a transparent electrode composed of ITO by a method other than wet etching. SOLUTION: A gas mixture of hydrogen iodide gas and helium gas is introduced into inside of a reaction vessel 1 through a gas inlet opening 6, and the ITO layer of a specimen 8 placed on a lower electrode 2 is dry etching by reactive ion etching. In this case, satisfactory result is obtained by setting the substrate temperature of the specimen 8 at 80 deg.C in central area and 110 deg.C in outer circumferential area.
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