METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING RINSING AND DRYING SUBSTRATE WHERE FINE PATTERNS ARE FORMED

摘要

A method for fabricating a semiconductor device is provided to minimize formation of bridges between fine patterns by eliminating water remaining on a substrate using a drying agent containing fluorinated organic compound. A fine pattern is formed on a substrate(100) by using set etching solution, and then the substrate with the fine pattern is dried by using a drying agent containing a fluorinated organic compound. The fluorinated organic compound contains at least one selected from the group consisting of hydrofluoroether(HFE), hydroflurocarbon(HFC), and perflurocarbon(PFC). The substrate with the fine pattern is rinsed by deionized water.