| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask pattern forming method for suppressing size variations with no influence of a storage period, and to provide a semiconductor device manufacturing method using the same. <P>SOLUTION: First, a procedure 1 is an exposure condition measuring step of previously measuring relationships between a storage period under storage environment and the influences of exposure sensitivity and proximity effects for chemically amplified resist. Then, a procedure 2 is a step of measuring how long the storage period is for the chemically amplified resist during exposure in actually manufacturing steps. A procedure 3 is an exposure condition determining step of finding the exposure sensitivity and an optimum PEC parameter value during exposure in accordance with the investigated exposure sensitivity and a previously measured aging effect amount. A procedure 4 is an exposure step of using the found exposure amount and PEC parameter for exposing the chemically amplified resist. A pattern is formed in accordance with the procedures. <P>COPYRIGHT: (C)2009,JPO&INPIT |
