| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that data is conventionally recorded into or erased from a PRAM based on a change in physical property caused by a first-order phase transformation between a crystalline state and an amorphous state of a chalcogen compound containing Te as a recording material, and a recording thin film is formed of a polycrysal rather than a monocrystal, and therefore has variations in its resistance value, and read/write cyclability is limited by a change in volume during phase transition. <P>SOLUTION: The present invention provides a solid-state memory having a superlattice structure including a thin film containing Sb and a thin film containing Te. As a result, write/erase cyclability is increased to 10<SP>15</SP>. <P>COPYRIGHT: (C)2009,JPO&INPIT |
