| 发明名称 |
METHOD OF FORMING AN ISOLATION STRUCTURE IN A WELL OF A SUBSTRATE |
| 摘要 |
A method includes forming an isolation structure in a well of a substrate. A portion of the isolation structure protrudes from a top surface of the well. The isolation structure is partially removed, thereby forming a modified isolation structure. An upper surface of the modified isolation structure is lower than the upper surface of the substrate. |
| 申请公布号 |
US2016211329(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201615083844 |
申请日期 |
2016.03.29 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHOU Chien-Chih;THEI Kong-Beng |
| 分类号 |
H01L29/10;H01L29/66 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming an isolation structure in a well of a substrate, an upper portion of the isolation structure protruding from a top surface of the well; and partially removing the isolation structure to form a modified isolation structure, wherein an upper surface of the modified isolation structure is lower than an upper surface of the substrate. |
| 地址 |
Hsinchu TW |
