| 发明名称 |
Inverters and Manufacturing Methods Thereof |
| 摘要 |
Inverters and methods of manufacture thereof are disclosed. In some embodiments, an inverter includes a substrate and a first tunnel FET (TFET) disposed over the substrate. The first TFET is a first fin field effect transistor (FinFET). A second TFET is over the first TFET. The second TFET is a second FinFET. A junction isolation region is disposed between a source of the first TFET and a source of the second TFET. |
| 申请公布号 |
US2016211264(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201514919568 |
申请日期 |
2015.10.21 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Peng Cheng-Yi |
| 分类号 |
H01L27/092;H01L21/8238;H01L21/84;H01L29/06;H01L27/12 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An inverter, comprising:
a substrate; a first tunnel FET (TFET) disposed over the substrate, the first TFET comprising a first fin field effect transistor (FinFET); a second TFET disposed over the first TFET, the second TFET comprising a second FinFET; and a junction isolation region disposed between a source of the first TFET and a source of the second TFET. |
| 地址 |
Hsin-Chu TW |
