| 摘要 |
PURPOSE:To obtain uniform finish sizes regardless of the position of a projecting image plane by forming a wafer for monitoring by using a reticule for monitoring, measuring the pattern sizes, forming size correction data for each of regions, and correcting reticule data for each of the regions by using this data. CONSTITUTION:The reticule 10 for monitoring is first formed. This reticule for monitoring divides one short of a stepper to plural regions and forms the same band-shaped patterns 12 for polysilicon in the respective regions. A polysilicon layer is then formed on the silicon wafer and the reduction stepping is executed by using the reticule 10. After the resist is developed, the polysilicon layer is etched with these resist patterns as a mask, by which the polysilicon patterns are formed. The resistance value of the resulted polysilicon patterns is measured and the table of correction values is formed. The correction value for each of the regions is added by using the table 18 of the correction values to the data of the reticule for forming the silicon patterns of an actual semiconductor integrated circuit device, by which the reticule data is corrected. The reticule is formed by the corrected reticule data. |
