Lateral devices containing permanent charge

摘要

A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges are embedded in the insulation region, sufficient to cause inversion in the insulation region.

主权项

1. A lateral semiconductor device, comprising:
a first-conductivity-type source region; a second-conductivity-type body region, interposed between said source region and a first-conductivity-type drift region, said body region being capacitively coupled to a gate electrode lying at least partially in a trench; a first-conductivity-type drain region; permanent charge embedded in an insulating region which vertically adjoins said drift region, said permanent charge having a polarity which tends to deplete adjacent semiconductor material; wherein said gate electrode is separated from the adjacent semiconductor material by a layer of gate oxide; and wherein the gate oxide adjacent to said drift region is thicker than the gate oxide adjacent to said body region.