| 主权项 |
1. A method of bonding interconnects, comprising:
providing a first substrate and a second substrate in a reduction chamber, a first set of metal pads projecting from a surface of the first substrate, the first substrate comprising a first integrated circuit, and a second set of metal pads projecting from a surface of the second substrate, the second substrate comprising a second integrated circuit, wherein the providing comprises:
retaining the first substrate on a bond head in the reduction chamber;retaining the bond head and a leveler on a support such that the leveler is disposed between the bond head and the support; andretaining the second substrate on a supplemental support; laterally aligning the first set of metal pads to the second set of metal pads, thereby forming an aligned set of metal pads; after the laterally aligning, vertically leveling the first substrate relative to the second substrate with the leveler while the first set of metal pads and the second set of metal pads are spaced apart, thereby reducing a tilt between facing surfaces of the first substrate and the second substrate, wherein the leveler is connected to and controlled by a controller; after the vertically leveling, starting a reduction process to reduce metal oxide from the first set and the second set of metal pads using a reduction gas; bringing the first set of metal pads in contact with the second set of metal pads after the starting the reduction process; and bonding the first set of metal pads with the second set of metal pads by using at least in part ultrasonic vibration to the aligned set of metal pads after the bringing, wherein a transducer coupled to the support causes the bond head to deliver ultrasonic vibration to the aligned set of metal pads, wherein the transducer further causes the supplemental support to deliver ultrasonic vibration to the aligned set of metal pads. |
