MANUFACTURING METHOD OF OXIDE FILM AND SPUTTERING APPARATUS

摘要

Provided is a method for manufacturing an oxide using a sputtering apparatus including a target unit and a substrate holder. In the target unit, a first target and a second target are located with a predetermined space therebetween so that front surfaces thereof face each other. The substrate holder and a side of the target unit are located with a predetermined space therebetween. The method includes providing a substrate for the substrate holder, generating plasma including an ion between the first and the second targets by application of a potential therebetween, generating a sputtering particle including the oxide by a collision of the ion with the first and the second targets, and depositing the sputtering particle on the substrate while the target unit is moved in a direction parallel to a formation surface of the substrate.

主权项

1. A method for manufacturing an oxide film using a sputtering apparatus,
the sputtering apparatus including:
a target unit including a first target, a second target, a first magnet, and a second magnet; anda substrate holder,wherein the first magnet is located on a rear surface of the first target,wherein the second magnet is located on a rear surface of the second target,wherein the first target and the second target are located with a predetermined space therebetween so that front surfaces of the first target and the second target face each other, andwherein the substrate holder and a side of the target unit are located with a predetermined space therebetween, comprising the steps of: providing a substrate for the substrate holder; generating plasma including an ion between the first target and the second target by application of a potential to each of the first target and the second target; generating a sputtering particle including an oxide by a collision of the ion with the first target and the second target; and forming an oxide film by depositing the sputtering particle on the substrate while the target unit is moved in a direction parallel to a formation surface of the substrate.