METHOD FOR MANUFACTURING THIN FILM

摘要

The present invention relates to a method for manufacturing a thin film, comprising the steps of: preparing a substrate; preparing a raw material comprising a compound consisting of SiH2, as a basic structure thereof, and a functional group, including at least one of carbon, oxygen, and nitrogen, linearly bonded to both sides of the basic structure; vaporizing the raw material, and loading the substrate into a chamber; and providing the vaporized raw material to the inside of the chamber. Furthermore, the present invention is capable of depositing a high-quality thin film under various processing conditions; manufacturing a thin film within a wide range of processing temperatures, processing pressures, etc.; and utilizing various methods and equipment for manufacturing a thin film.

主权项

1. A method of manufacturing a thin film, the method comprising:
providing a substrate; providing a raw material; vaporizing the raw material and loading the substrate into a chamber; supplying the vaporized raw material to an interior of the chamber; wherein a reaction gas is supplied to the chamber during or before the vaporized raw material is supplied; and wherein the raw material is a precursor comprising at least one of the following chemical formulae: (where R is a functional group)