| 摘要 |
<p>PURPOSE:To obviate the generation of the loss of clarity by clouding in transparent electrodes consisting of a metal oxide, such as ITO, and to directly form a silicon nitride film thereon by constituting at least either of a passivation film and a dielectric film of a silicon nitride film and specifying the number of the Si-H bonds of at least a part of this silicon nitride film to a specific value or below. CONSTITUTION:The number of the Si-H bonds of the silicon nitride film 103 acting as the dielectric film for charge holding capacities is <=1.0X10<22>cm<-3>. Since the dielectric film 103 is formed without generating the clouding in the transparent common electrode 45 consisting of a metal oxide film, the transmittance of the electrode 45 is improved and the active matrix substrate having an excellent display characteristic is obtd. Meanwhile, the TFT characteristic is stable as the film forming temp. of a gate insulating film is higher and, therefore, the gate electrode 42 is formed on the film 103 and since the electrode 45 is already coated with the film 103 at the time of forming the gate electrode film 4 consisting of the silicon nitride film, the electrode 45 is protected against the gaseous plasma atmosphere at the time of forming the electrode 48. Then, the conditions for forming the film 48, etc., are set without being conscious of the clouding of the electrode 45.</p> |
