| 摘要 |
<p>PURPOSE:To obtain a phase shifting mask, which can transcribes more minute pattern, by providing a light absorbing member at the other part, where a phase shifting member is not provided, out of a light transmitting part, and making small the difference in the transmissivities of lights, which pass the light transmitting parts on both sides. CONSTITUTION:A transparent conductive film 3 is formed all over the surface of a transparent substrate 1, and a shading film (Cr film) 2 is made on this transparent film 3, and one part of this shading film 2 is removed along the specified pattern so as to form light transmitting parts 6 and 8, and a phase shifting layer 4 a is made on one light transmitting part 6 so that it may cover the light transmitting part 6, and a light absorbing layer 5a is made on the other light transmitting part 8. And at the same time, the light absorptivity of the light absorbing layer 5a is set properly so that the transmissivities of the light L1, which passes a phase shifting layer 4a, and the light L2, which transmits a light absorbing layer 5a, may be substantially equal. Moreover, by constituting the light absorbing layer of Cr2O3 nickel oxide, and changing the oxidation degree, the difference in light transmissivity of the light transmitting part is made small.</p> |
