| 摘要 |
PURPOSE:To enable a blue light emitting diode to be enhanced in emission efficiency by a method wherein an intrinsic or an N-type ZnSxSe1-x layer is provided onto a P-type SiC substrate, and an N-type ZnSySe1-y layer large in S composition is provided thereon. CONSTITUTION:An intrinsic or an N-type ZnSxSe1-x (0<=X<=1) layer 13 is formed on a P-type SiC substrate 12 of hexagonal system, and an N-type ZnSySe1-y (0<y<=1, x<y) layer 14 larger in S composition than ZnSxSe1-x is formed thereon to constitute a double-heterojunction structure. When a forward voltage is applied onto the double-heterojunction structure concerned, holes 22 inside the P-type SiC substrate 12 of hexagonal system and electrons 21 in the N-type ZnSySe1-y layer 14 are injected into the N-type ZnSxSe1-x layer 13 which serves as a well layer and recombined together. By this setup, blue light 23 of high brightness can be emitted. |
