| 摘要 |
A high speed response phototransistor comprises a plurality of pairs of base layers and emitter layers formed with progressive diffusions on a common collector, and an emitter electrode which commonly connects the plurality of emitter layers. The width of a depletion layer between the base and emitter layers is broadened so that a narrow base-emitter layer whose area is significantly smaller than a planar spread of the depletion layer.
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