| 摘要 |
PURPOSE:To obtain a good glass film by a method wherein after a glass resist is formed by adhesion at the groove on a semiconductor substrate, a resist component is removed by the plasma etching method, then multicomponent glass is provided by firing. CONSTITUTION:A glass resist film 17 containg multicomponent glass is formed by adhesion on the surface of a groove 16 and over an oxide film 15. Next, only the glassresist film 17 is left at the groove 16 in photo-etching process. A resist component contained in the glassresist film 17 is completely caronized and removed by the oxygen plasma etching method, then glass firing is performed at prescribed glass firing temperature and under prescribed firing condition to form a glass film 18 at the groove 16. |
