| 摘要 |
PURPOSE:To eliminate a sudden change in a composition in the hetero-interface constituted by a buffer layer and an optical absorption layer, and to prevent the deterioration of light-receiving characteristics by interposing an intermediate layer between the optical absorption layer and a multiplication layer on interposing the intermediate layer on the side reverse to the side where the optical absorption layer and the multiplication layer are in contact or between the multiplication layer and a semiconductor substrate. CONSTITUTION:The semiconductor light-receptor differs from conventional devices in a point where an intermediate layer 9 is interposed between a buffer layer 2 and an optical absorption layer 3. The intermediate layer 9 has a composition intermediating between the buffer layer 2 and the optical absorption layer 3. A phenomenon in which a nuclear hetero-interface has photo sensitivity is not generated even when a depletion layer reaches to the hetero-interface because a sudden change in the hetero-interface by the buffer layer 2 and the optical absorption layer 3 is relaxed owing to the presence of the intermediate layer 9. |
