| 摘要 |
PURPOSE:To increase gains at high frequency by forming a through-hole electrically connecting an insular source electrode to a back electrode formed onto the second main surface of a semiconductor device. CONSTITUTION:A FET1 constituted by through-holes 10 shaped to a semi- insulating substrate 2 in order to electrically connect an insular source electrode 4 and the second main surface of the FET1, a back electrode 11 and a bridge electrode 12 is soldered (die-bonded) to carriers, thus grounding the source electrode 4. Consequently, source inductance and source resistance can be reduced, and high gains can be obtained when the device is used for a high-frequency amplifier. Even when die bonding is insufficient and thermal or electrical dispersion is generated in a chip, the dispersion can be relaxed by the bridge electrode 12, thus acquiring high reliability. |
