| 摘要 |
PURPOSE:To obtain emission of infrared or visible light with high efficiency, by providing a hetero junction of Ga1-xAlx-As/Ga1-xAlxAs on a p-type ZnSxSe1-x (x<1) while utilizing the ZnSSe as a light-emitting window. CONSTITUTION:Among P-N junctions of III-V family compound semiconductors, a double hetero junction of GaA As is selected since it has a less reabsorption effect by peripheral crystals, while ZnSSe is selected for a material of a sub strate since crystals thereof have the minimum mismatch in lattice with mixed crystals of GaAs-AlAs. For example, n Ga0.7Al0.3As 12, n-Ga0.9Al0.1As 13, p-Ga0.7 Al0.3As 14 and p-ZnSSe 15 are deposited on an n-GaAs substrate 11 sequentially in that order so that light can be emitted from the p-ZnSSe. In this manner, a infrared-lightemitting diode emitting light with a wavelength of 840nm and having an external quantum efficiency of 45% can be obtained. When Ga0.5Al0.5 As is selected for the first layer, Ga0.7Al0.3As for the second layer and Ga0.5Al0.5 As for the third layer, a highly efficient red-light-emitting diode emitting light with a wavelength of 660nm and having a quantum efficiency of 7% can be obtained. |
