发明名称 |
Semiconductor component with turn-off facility |
摘要 |
In a semiconductor component with turn-off facility of the GTO type with direct pressure contact, a balancing of the local pressure distribution in the region of the cathode fingers (7) which results in an improved alternating load resistance and also in an extension of the allowable pressure range is achieved by structural matching of the anode metallization (4) to the gate-cathode structure on the cathode side. |
申请公布号 |
US5031016(A) |
申请公布日期 |
1991.07.09 |
申请号 |
US19890392158 |
申请日期 |
1989.08.10 |
申请人 |
ASEA BROWN BOVERI LIMITED |
发明人 |
JAECKLIN, ANDRE;RAMEZANI, EZATOLL;VLASAK, THOMAS |
分类号 |
H01L23/48;H01L23/482;H01L29/74;H01L29/744 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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