Overheating detection circuit for detecting overheating of a power device.

摘要

An arrangement for detecting overheating of a power integrated circuit includes a power device integrated in a semiconductor substrate (11) and an overheating detection circuit. The overheating detection circuit includes a reverse biased pn junction (13, 16) formed in the same semiconductor substrate (11) as the power device and having a reverse leakage current flow which is temperature dependent, and a voltage convertor (2) formed in the same semiconductor substrate (11) as the power device and coupled to the pn junction (13, 16) for producing a voltage proportional to the reverse leakage current flow. A threshold circuit is connected for receiving the proportional voltage and producing a signal when the proportional voltage exceeds a threshold voltage (Vth) to indicate that the power device is overheated. <IMAGE> <IMAGE> <IMAGE>