| 摘要 |
PROBLEM TO BE SOLVED: To cut down both of the output capacity and on-resistance of a semiconductor switching device. SOLUTION: Respective power MOSs comprising a semiconductor switching device 15 is composed of an N type silicon active layer 151 in relatively low impurity concentration as well as a silicon supporting substrate 153 supporting the lower surface side of this silicon active layer 151 by the upper surface through the intermediary of a buried oxide film 152 to be structured of an LDMOS using SOI(Silicon On Insulator). Besides, a photovoltaic device is applied with the beams from a light emitting element so as to irradiate the semiconductor switching device 15 with the same beams. |
