发明名称 |
Integrated circuit having SiC layer |
摘要 |
The present invention is related to an integrated circuit having an SiC etch stop layer fabricated using a method for removal of silicon carbide layers and in particular amorphous SiC of a substrate comprising the steps of: converting at least partly said exposed part of said carbide-silicon layer into an oxide-silicon layer by exposing said carbide-silicon layer to an oxygen containing plasma; and removing said oxide-silicon layer from said substrate.
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申请公布号 |
US6806501(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20030359403 |
申请日期 |
2003.02.05 |
申请人 |
INTERUNIVERSTAIR MICROELEKTRONICA CENTRUM |
发明人 |
VANHAELEMEERSCH SERGE;MEYNEN HERMAN;DEMBOWSKI PHILIP D. |
分类号 |
H01L21/306;H01L21/311;H01L21/768;H01L23/522;(IPC1-7):H01L31/03 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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