发明名称 Endowed organic semiconductor materials and method of prepration
摘要 <p>Production of a doped organic semiconductor material comprises splitting hydrogen, carbon monoxide, nitrogen or hydroxy radicals into organic semiconductor material after mixing with an uncharged organic compound as dopant, and transferring an electron onto or from the semiconductor material. An independent claim is also included for a doped organic semiconductor material produced by the above process.</p>
申请公布号 EP1508903(A2) 申请公布日期 2005.02.23
申请号 EP20040016187 申请日期 2004.07.09
申请人 NOVALED AG 发明人 WERNER, ANSGAR, DIPL.-PHYS.;PFEIFFER, MARTIN, DR.;FENGHONG, LI
分类号 H01L51/50;C07C13/15;C07C13/24;C07C15/20;C30B15/00;C30B21/06;C30B23/00;C30B25/00;C30B27/02;C30B28/10;C30B28/12;C30B28/14;C30B30/04;C30B31/00;H01L31/04;H01L51/00;H01L51/30;H01L51/40;H01L51/42;H05B33/14;H05B33/22;(IPC1-7):H01L51/40 主分类号 H01L51/50
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