| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an image sensor suitable for high resolution, and to provide its manufacturing method. <P>SOLUTION: The image sensor includes a first photodiode which has a depth, capable of sensing a light of a first wavelength and is formed in a semiconductor substrate; a second photodiode which has a depth, capable of sensing a light of a second wavelength shorter than the first wavelength and is formed in the semiconductor substrate, in the upper side of the first photodiode; a third photodiode which is arranged at a position in contact with the second photodiode; a plug which is electrically connected to the first photodiode; a transistor region which is electrically connected to the first photodiode, the second photodiode, and the third photodiode and is formed on the semiconductor substrate; an insulating film which covers the transistor region; and a microlens which is formed on the insulating film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
