发明名称 Microelectronic assembly having a heat spreader for a plurality of die
摘要 A method of manufacturing a microelectronic assembly (100) and a microelectronic device (4100) that include a stacked structure (101). The stacked structure includes a heat spreader (104), at least one die (106) thermally coupled to at least a portion of one side of the heat spreader, at least one other die (108) thermal coupled to at least a portion of an opposite side of the heat spreader, at least one opening (401) in the heat spreader located in a region of between the two die, an insulator (603) disposed in the at least one opening, and electrically conductive material (1308, 1406) in an insulated hole (705) in the insulator. The heat spreader allows electrical communication between the two die through the opening while the insulator isolates the electrically conductive material and the heat spreader from each other.
申请公布号 US9431380(B2) 申请公布日期 2016.08.30
申请号 US201514678352 申请日期 2015.04.03
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 Stephens Tab A.;McShane Michael B.;Pelley Perry H.
分类号 H01L23/34;H01L25/00;H01L25/04;H01L23/00;H01L25/065;H01L23/367;H01L23/48;H01L23/31;H01L21/321;H01L21/3213;H01L21/768 主分类号 H01L23/34
代理机构 代理人
主权项 1. A method of manufacturing a microelectronic device, comprising: providing a heat spreader having a first major surface and a second major surface opposite the first major surface, wherein the heat spreader has an opening, an insulator in the opening, an electrically insulated through hole in the insulator, and electrically conductive material in the electrically insulated through hole; providing a first die and a second die, each die having a through via and an electrically conductive substance therein; thermally coupling the first die to at least a portion of the first major surface of the heat spreader, the portion including the opening, wherein the first die is located with respect to the first major surface of the heat spreader; and thermally coupling the second die to at least a portion of the second major surface of the heat spreader, the portion including the opening, wherein the second die is located with respect to the second major surface of the heat spreader; wherein the first die includes a first surface of an electrically conductive material electrically coupled to the electrically conductive substance of the through via of the first die prior to the thermally coupling the first die; wherein the second die includes a first surface of an electrically conductive material electrically coupled to the electrically conductive substance of the through via of the second die prior to the thermally coupling the second die; disposing electrically conductive material in the electrically insulated through hole, wherein the step of disposing electrically conductive material in the electrically insulated through hole comprises placing a solder ball at the electrically insulated through hole prior to thermally coupling the at least a second die to the at least a portion of the second major surface of the heat spreader; wherein the disposing further comprises reflowing the solder ball after the thermally coupling the first die and the thermally coupling the second die, wherein as result of the reflowing, material of the solder ball electrically contacts the first surface of the electrically conductive material of the first die and electrically contacts the first surface of the electrically conductive material of the second die; wherein the electrically conductive material in the electrically insulated through hole of the heat spreader is coupled to the electrically conductive substance in the through via of the first die and to the electrically conductive substance in the through via of the second die.
地址 Austin TX US