| 摘要 |
<p>PURPOSE:To easily repair the defective picture element arising from a defect, such as pinhole, generated in an additive capacity electrode. CONSTITUTION:An additive capacity bus line 70 is provided in the part adjacent to a picture element electrode 40 in parallel with a gate bus line 10 and one end of a 1st conductor 72 is superposed via an insulating film 74 on the part facing the TFT 30 forming part of the additive capacity bus line 70. One end of a 2nd conductor piece 74 is superposed via a gate insulating film 50 on the part below the other end of the 1st conductor piece 72. The end of a source bus line projecting part 21 is superposed via a gate insulating film 50 on the part above the other end of the 2nd conductor piece 74 to connect the picture element electrode 40 and the additive capacity electrode 70 only in the part above the 1st conductor piece 72 forming part. The constitution to dispose the redundancy structure consisting of the above-mentioned elements in the part adjacent to the picture element electrode 40 is adopted. A repair operation to irradiate the base part of the 1st conductor piece 72, the superposed parts of the 1st, 2nd conductor pieces 72, 74 and the superposed part 21 of the 2nd conductor piece 74 and the source bus line projecting part 21 with a laser beam through a glass substrate 1 is carried out, by which the source bus line 20 and the picture element electrode 40 are conducted.</p> |
