SEMICONDUCTOR LOGIC DEVICE EMPLOYING THE GUNN EFFECT ELEMENT

摘要

A logic device comprises a Gunn effect element having a capacitive element connected across its electrodes. The Gunn effect element is normally biased below the threshold value, and an input pulse is applied to raise the internal field of the Gunn effect element above the threshold value. The resultant charging of the capacitive element causes the Gunn effect element to be maintained in a state of oscillation.